1/9 DMV1500M7 ? july 2002 - ed: 1a damper + modulation diode for video symbol parameter value unit modul damper v rrm repetitive peak reverse voltage 700 1500 v i fsm surge non repetitive forward current tp = 10 ms sinusoidal 50 75 a t stg storage temperature range -40to+150 c t j maximum operating junction temperature 150 absolute ratings (limiting values, per diode) insulated to-220ab (bending option f5 available) n 700v modulation diode n full kit in one package n high breakdown voltage capability n very fast recovery diode n specified turn on switching characteristics n low static and peak forward voltage drop for low dissipation n insulated version: insulated voltage = 2500 v rms capacitance = 7 pf n planar technology allowing high quality and best electrical characteristics n outstanding performance of well proven dtv as damper and new faster turbo 700v technology as modulation. features and benefits high voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with e/w correction. the insulated to-220ab package includes both the damper diode and the modulation diode. assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer. description modul damper i f(av) 3a 6a v rrm 700 v 1500 v t rr (max) 55 ns 135 ns v f (max) 1.55 v 1.65 v main product characteristics 1 2 3 damper modulation 123
? DMV1500M7 2/9 symbol parameter value unit r th(j-c) damper junction to case 4.8 c/w r th(j-c) modulation junction to case 5.5 thermal resistances symbol parameter test conditions value unit tj = 25c tj = 125c typ. max. typ. max. v f * forward voltage drop i f =6a 1.4 2.2 1.2 1.65 v i r ** reverse leakage current v r = 1500v 100 100 1000 m a pulse test : * tp = 380 m s, d <2% **tp = 5 ms, d <2% to evaluate the maximum conduction losses of the damper diode use the following equations : p=1.37xi f(av) + 0.047 x i f 2 (rms) static electrical characteristics of the damper diodes symbol parameter test conditions value unit tj = 25c tj = 125c typ. max. typ. max. v f * forward voltage drop i f =3a 2.0 1.25 1.55 v i r ** reverse leakage current v r = 700v 20450 m a pulse test : * tp = 380 m s, d <2% ** tp = 5 ms, d <2% to evaluate the maximum conduction losses of the modulation diode use the following equations : p=0.98xi f(av) +0.19xi f 2 (rms) static electrical characteristics of the modulation diode symbol parameter test conditions value unit typ. max. t rr reverse recovery time i f = 100ma i r = 100ma i rr = 10ma tj = 25c 750 ns t rr reverse recovery time i f =1a di f /dt = -50a/ m s v r = 30v tj = 25c 110 135 ns recovery characteristics of the damper diode
? DMV1500M7 3/9 symbol parameter test conditions value unit typ. max. t fr forward recovery time i f =6a di f /dt = 80a/ m s v fr =3v tj = 100c 570 ns v fp peak forward voltage i f =6a di f /dt = 80a/ m s tj = 100c 21 28 v turn-on switching characteristics of the damper diode symbol parameter test conditions value unit typ. max. t rr reverse recovery time i f = 100ma i r = 100ma i rr = 10ma tj = 25c 120 360 ns t rr reverse recovery time i f =1a di f /dt = -50a/ m s v r = 30v tj = 25c 55 ns recovery characteristics of the modulation diode symbol parameter test conditions value unit typ. max. t fr forward recovery time i f =3a di f /dt = 80a/ m s v fr =2v tj = 100c 240 ns v fp peak forward voltage i f =3a di f /dt = 80a/ m s tj = 100c 9v turn-on switching characteristics of the modulation diode
? DMV1500M7 4/9 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i (a) p p (w) f(av) fig. 1-1: power dissipation versus peak forward current (triangular waveform, d = 0.45) (damper diode). 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i (a) p p (w) f(av) fig. 1-2: power dissipation versus peak forward current (triangular waveform, d = 0.45) (modula- tion diode). 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 tamb(c) r th(j-a) =r th(j-c) t d =tp/t tp i (a) f(av) fig. 2-1: average forward current versus ambient temperature (damper diode). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 r th(j-a) =r th(j-c) t d =tp/t tp i (a) f(av) tamb(c) fig. 2-2: average forward current versus ambient temperature (modulation diode). 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 v (v) fm t j = 25 c (maximum values) t j = 125 c (maximum values) t j = 125 c (maximum values) t j = 125 c (typical values) t j = 125 c (typical values) i (a) fm fig. 3-1: forward voltage drop versus forward current (damper diode). 0.1 1.0 10.0 100.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t j = 25 c (maximum values) t j = 125 c (maximum values) t j = 125 c (maximum values) t j = 125 c (typical values) t j = 125 c (typical values) i (a) fm v (v) fm fig. 3-2: forward voltage drop versus forward current (modulation diode).
? DMV1500M7 5/9 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 t (s) p t d =tp/t tp zth(j-c)/rth(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 0 5 10 15 20 25 30 35 40 45 50 1.e-03 1.e-02 1.e-01 1.e+00 t(s) t c = 25 c t c = 50 c t c = 100 c i m t d =0.5 i (a) m fig. 5-1: non repetitive peak forward current ver- sus overload duration (damper diode). 0 5 10 15 20 25 30 1.e-03 1.e-02 1.e-01 1.e+00 t(s) t c = 25 c t c = 50 c t c = 100 c i (a) m i m t d =0.5 fig. 5-2: non repetitive peak forward current ver- sus overload duration (modulation diode). 0 100 200 300 400 500 600 700 800 900 1000 0.1 1.0 10.0 dif/dt(a/s) i f = 6a t j = 125 c 90% confidence q (nc) rr fig. 6-1: reverse recovery charges versus dif/dt (damper diode). 0 20 40 60 80 100 120 140 160 180 0.1 1.0 10.0 100.0 dif/dt(a/s) i f = 3a t j = 125 c 90% confidence q (nc) rr fig. 6-2: reverse recovery charges versus dif/dt (modulation diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 dif/dt(a/s) i f = 6a t j = 125 c 90% confidence i (a) rm fig. 7-1: peak reverse recovery current versus dif/dt (damper diode).
? DMV1500M7 6/9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.0 10.0 100.0 dif/dt(a/s) i f = 3a t j = 125 c 90% confidence i (a) rm fig. 7-2: peak reverse recovery current versus dif/dt (modulation diode). 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 140 dif/dt(a/s) i f = 6a t j = 125 c 90% confidence v (v) fp fig. 8-1: transient peak forward voltage versus dif/dt (damper diode). 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 dif/dt(a/s) i f = 3a t j = 125 c 90% confidence v (v) fp fig. 8-2: transient peak forward voltage versus dif/dt (modulation diode). 400 450 500 550 600 650 700 750 800 0 20 40 60 80 100 120 140 dif/dt(a/s) i f = 6a t j = 125 c v fr = 3 v 90% confidence tfr(ns) fig. 9-1: forward recovery time versus dif/dt (damper diode). 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 dif/dt(a/s) i f = 3a t j = 125 c v fr = 2 v 90% confidence tfr(ns) fig. 9-2: forward recovery time versus dif/dt (modulation diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 tj(c) v fp q rr i rm i , v , q [tj] / i , v , q [tj=125c] rm fp rr rm fp rr fig. 10: relative variations of dynamic parame- ters versus junction temperature.
? 7/9 DMV1500M7 dmv1500m 7 / f5 damper and modulation diodes for video lead bending (option) v = 700v (modulation diode) rrm ordering information 1 10 100 1 10 100 1000 v (v) r f= 1 mhz v osc = 30 mv t j = 25 c damper diode modulation diode c(pf) fig. 11: junction capacitance versus reverse voltage applied (typical values)
? DMV1500M7 8/9 package mechanical data to-220ab f5 option ref. dimensions millimeters inches min. max. min. max. a 15.20 15.90 0.598 0.625 a1 24.16 26.90 0.951 1.059 a3 1.65 2.41 0.064 0.094 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 l 2.65 2.95 0.104 0.116 i2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 l4 15.80 16.80 0.622 0.661 16.40 typ. 0.645 typ. m1 2.92 3.30 0.114 0.129 r1 1.40 typ. 0.055 typ. r2 1.40 typ. 0.055 typ. c2 b a1 c b2 l2 c2 a3 r2 r1 l3 b1 l4 a f l i e c1 m1 ? n cooling method: by conduction (c) n recommended torque value: 0.8 m.n. n maximum torque value: 1 m.n. 2.2mm 2.54mm 1mm 3.1mm printed circuit layout for f5 layout
? DMV1500M7 9/9 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com type marking package weight base qty delivery mode DMV1500M7 DMV1500M7f5 DMV1500M7 to-220ab 2.2 g 50 tube n epoxy meets ul94, v0 package mechanical data to-220ab m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 n cooling method: by conduction (c) n recommended torque value: 0.8 m.n. n maximum torque value: 1 m.n.
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